???`? ? ?? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink ounting orque usbar to ain erminal . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 75ma . . nput apacitance = 10v, = 0v,= 1mh 6,300 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 8 g = 13 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 75a, = 0v . . r g everse ecovery ime = 75a, = -10v i/t= 150a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . 5(e1) 4(g1) (c1) 3 (e2) 2 (c2e1) 1 3-m5 12 11 12 11 12 2-? 5. 5 5 4 12 35 4 0.25 80 94 1 2 3 23 23 17 6 8 4-f ast en tab #110 t= 0.5 16 16 16 7 7 30 +1.0 - 0.5 23 label
???`? ?? 0246810 0 25 50 75 100 125 150 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 75a i c =30a 150a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =30a 75a 150a t c =125 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =8 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 20 50 100 200 500 1000 2000 5000 10000 20000 50000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0255075 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g =13 v ge =15v t c =25
???`? ?? 01234 0 25 50 75 100 125 150 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 5 10 20 50 100 200 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) tf tr ton toff v cc =600v i c =75a v ge =15v t c =25 0 150 300 450 1 2 5 10 20 50 100 200 500 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i rrm trr i f =75a t c =25 10 -5 10 -4 10 -3 10 -2 10 -1 110 2x10 -3 5x10 -3 -2 2x10 -2 5x10 -2 -1 2x10 -1 5x10 -1 1 2 5 time t s tansient thermal impedance rth (j-c) (?c/w) fig11-tansient thermal impedance tc=25 1 shot pulse igbt frd 1 1x10 1x10 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =13 v ge =15v t c Q125
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